HTX News
06/23 07:31
On June 23, Samsung Electronics announced the development of its Universal Flash Storage (UFS) 5.0 product. This product is based on the ninth generation V-NAND (V9) flash memory technology and is optimized for edge AI. It features a data transfer bandwidth of 10.8 GB/s, with sequential read speeds of 10.8 GB/s and sequential write speeds of 9.5 GB/s. Compared to the previous generation UFS 4.1, UFS 5.0's transfer bandwidth has doubled, enabling rapid processing of massive amounts of data.
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