Samsung Electronics Advances 10nm-Class 7th Generation 1d DRAM Mass Production, Plans to Introduce Equipment in First Half of Next Year

06/17 06:40

On June 17, Citrini researcher Jukan reported that Samsung Electronics is advancing preparations for the mass production of 10nm-class 7th generation 1d DRAM, with plans to introduce equipment in the first half of next year. Initial mass production is expected to start by the end of next year. Currently, the line width of 1c DRAM is about 11-12nm, while 1d will further shrink to 10-11nm to enhance performance and energy efficiency. The development of this process is relatively advanced, but key equipment is still in the development stage. Samsung is actively collaborating with partners to optimize yield and performance, with plans to refine the timeline by the end of the year. The 1d DRAM will serve as the core of Samsung's AI memory business, particularly for the HBM5E high-bandwidth memory core chip expected to be commercially available in 2029, supporting its competitiveness in the AI chip supply chain.
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