Intel Considers Dual-Sided Power Architecture for 1.4nm Process to Compete with TSMC and Samsung

07/05 11:20

On July 5, Intel is considering adopting a dual-sided power architecture that utilizes both front and back power supply in its 1.4nm ultra-fine process to catch up with competitors. Industry sources indicate that Intel initially planned to use the back power supply technology PowerDirect in its 14A base process at 1.4nm, but is now contemplating the introduction of a dual-side architecture in the subsequent 14A2 process. Intel previously announced plans to increase chip density by 1.3 times in the 14A process compared to the 18A process; the target M0 pitch for the 14A process is approximately 28nm, while the 14A2 process may advance the M0 pitch to 21nm through half-node improvements. While maintaining a back power supply network as the primary source, Intel will reallocate some front metal wiring for auxiliary power and clock signal purposes to compensate for power margin deficiencies caused by scaling and exposure limitations. The Intel 14A process is scheduled to enter risk production in 2028 and mass production in 2029. Intel needs to release the 0.9 version of the 14A process design kit to external customers by October this year and secure confirmed orders from major fabless clients within the following 18 months. In comparison, TSMC plans to ship actual 1.4nm A14 products in 2028, while Samsung Electronics aims to commercialize a 2nm improved process SF2Z using back power supply technology in 2027.

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