Analyst: 'This Altcoin's Rise is Driven by Major Players' — It Experienced a Sudden Spike Within Hours

cryptonews.ruPubblicato 2026-09-12Pubblicato ultima volta 2026-09-12

Introduzione

Crypto analyst Ali Martinez stated that the activity of large investors played a significant role in Ethereum's recent price surge. Today, Ethereum ($ETH) rose by approximately 10% in just two hours, climbing from $2,433 to $2,667. According to Martinez, the acceleration followed the release of August U.S. inflation data, which came in at 3.4% year-over-year. Blockchain data also points to increased activity from large investors in the market. Martinez noted that the number of $ETH transactions exceeding $1 million increased by roughly 14%, indicating more active participation from large players in the Ethereum market. However, data suggests Ethereum is approaching a significant resistance zone in the short term. The fact that over 10 million $ETH were previously traded in the $2,700 to $2,800 range indicates substantial selling pressure could emerge at these levels. Martinez stated that for Ethereum to start a new upward trend toward the $3,000 mark, it needs to overcome the supply barrier in the $2,700-$2,800 range with support from large cryptocurrency holders. The analyst added that the increased activity of these major holders is a positive factor, but the key area to watch in the near term remains the $2,700-$2,800 range.

Crypto analyst Ali Martinez stated that the activity of large investors played a significant role in Ethereum's recent spike. Today, Ethereum ($ETH) rose by approximately 10 percent in just two hours, climbing from $2,433 to $2,667. According to Martinez, the acceleration followed the publication of US inflation data for August, which stood at 3.4 percent year-on-year.

Blockchain data also points to increased activity by large investors in the market. Martinez stated that the number of $ETH transactions exceeding $1 million increased by about 14 percent, indicating more active participation by large investors in the Ethereum market.

However, available data suggests that Ethereum is approaching a significant resistance zone in the short term. The fact that deals involving more than 10 million $ETH were previously conducted in the range of $2,700 to $2,800 suggests that significant selling pressure may emerge at these levels.

According to Martinez, for Ethereum to start a new upward trend towards the $3,000 mark, it needs to overcome the supply barrier in the $2,700 to $2,800 range with the support of major cryptocurrency holders. The analyst added that the increased activity of large holders is a positive factor, but the key area to watch in the near term is the $2,700-$2,800 range.

*This is not investment advice.

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Domande pertinenti

QAccording to the analyst Ali Martinez, what is a significant reason behind Ethereum's sudden price surge?

AAccording to analyst Ali Martinez, the significant increase in activity from large investors played a major role in Ethereum's recent price surge.

QHow much did Ethereum's price increase in just two hours, and what was the specific price range?

AEthereum's price increased by approximately 10 percent in just two hours, rising from $2,433 to $2,667.

QWhat event, according to the article, accelerated Ethereum's price rise?

AThe article states that the price rise accelerated following the release of U.S. August inflation data, which came in at 3.4 percent year-over-year.

QWhat key resistance zone does Ethereum face in the short term, and why is it significant?

AEthereum faces a key resistance zone between $2,700 and $2,800. This area is significant because data shows that over 10 million ETH were previously traded in that range, indicating potential strong selling pressure.

QWhat does analyst Ali Martinez say Ethereum needs to do to begin a new upward trend towards $3,000?

AAnalyst Ali Martinez stated that for Ethereum to begin a new upward trend towards $3,000, it needs to break through the supply barrier in the $2,700 to $2,800 range with the support of large cryptocurrency holders.

Letture associate

Changxin Stands Transistors Upright: A Path to Catch Up While Bypassing EUV — Will It Shake the Big Three Memory Makers?

ChangXin Memory Technologies (CXMT) announced major progress in DRAM devices, 4F2 architecture, and hybrid bonding, briefly rattling the stocks of the three major memory makers. The key changes are the shift from the mainstream 6F2 cell architecture to 4F2, and the self-developed VSG (Vertical Surrounded Gate) transistor that enables it. In DRAM, each 1T1C cell pairs one transistor with one capacitor. Moving from 6F2 to 4F2 shrinks cell area by about one-third, allowing roughly 50% more cells in the same area—though chip-level density gains are lower (about 30–50%) because peripheral circuits do not shrink. 4F2 also relaxes design rules, reducing reliance on EUV by roughly two process generations, which matters greatly for CXMT, which cannot obtain EUV under export controls. It also eases capacitor manufacturing pressure. 4F2 is not unique to CXMT; all three major players are pursuing it. Samsung leads, targeting mass production around 2028; SK Hynix will likely adopt it one node later; Micron's plans are unclear and likely latest. CXMT says its first 4F2 product, a DDR5 RDIMM, will arrive by year-end, though volume and yield are unverified. Challenges include floating-body effects, difficult manufacturing sequences (epitaxy, backside processes, or hybrid bonding), array-periphery process decoupling, materials and resistance issues (molybdenum, ruthenium), and yield ramp. Short term (2026–2027), impact on supply-demand is limited. Medium to long term (post-2028), supply growth risks rise, potentially pressuring memory prices and the big three's profits, since conventional DDR drives most DRAM profit. CXMT gains an EUV-free catch-up path; Samsung may regain ground; SK Hynix's near-term position is safe; Micron looks relatively passive. Upstream equipment and materials suppliers may benefit.

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Changxin Stands Transistors Upright: A Path to Catch Up While Bypassing EUV — Will It Shake the Big Three Memory Makers?

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