SK Hynix Stock Price Hits New High: Delivers HBM4E Samples, Reinforcing Its Leading Position in AI Memory

marsbitPublicado a 2026-06-18Actualizado a 2026-06-18

Resumen

SK Hynix Delivers HBM4E Samples, Shares Hit Record High on Strong AI Memory Outlook SK Hynix has delivered samples of its next-generation AI memory chip, HBM4E, to major customers, sending its stock price soaring 7.3% to a historic high. The new 12-layer stacked flagship product offers a data processing speed of 16Gbps per pin, a more than 20% improvement in power efficiency, and a 17% reduction in thermal resistance compared to the previous generation. It also achieves a single-chip capacity of 48GB, enabled by Advanced MR-MUF packaging technology. This sample delivery accelerates SK Hynix's technological iteration in the high-bandwidth memory (HBM) field, solidifying its core position in the AI infrastructure supply chain. The market response reflects strong confidence in the company's ability to maintain leadership in the AI memory race, building on its established track record of mass production and supply for HBM3, HBM3E, and HBM4. The performance and efficiency gains of HBM4E are expected to enhance data processing capabilities in AI training and inference scenarios, addressing performance bottlenecks in next-generation AI systems.

SK Hynix has delivered HBM4E samples to key customers. This flagship 12-layer stacked memory achieves a data transfer speed of 16Gbps per pin, improves power efficiency by over 20%, reduces thermal resistance by 17%, and offers a single-chip capacity of 48GB. Upon the news, the company's stock price surged 7.3% intraday to a record high, fueling market expectations for its continued leadership in the AI memory race.

SK Hynix announced the delivery of samples of its next-generation AI memory chip, HBM4E, to key customers, pushing its stock price to a historic high.

SK Hynix stated on its official website on Thursday that this 12-layer stacked HBM4E product achieves a maximum data processing speed of 16Gbps per pin, improves power efficiency by over 20% compared to the previous generation, and reduces thermal resistance by 17% through advanced packaging technology. SK Hynix indicated it will work closely with partners to achieve timely mass production.

This sample delivery marks SK Hynix's accelerated technological iteration in the high-bandwidth memory field, further solidifying its core position in the AI infrastructure supply chain and providing the market with the latest signal of the company's continued leadership in the HBM technology roadmap.

Following the announcement, SK Hynix's stock price rose 7.3% intraday on the Korean trading platform, reaching a record intraday high. This gain reflects the market's strong anticipation of the company's sustained lead in the AI memory race. From HBM3 and HBM3E to HBM4, SK Hynix has established complete delivery capabilities from mass production to supply. The on-time delivery of these HBM4E samples further strengthens investor confidence in its ability to deliver on its technological promises.

Dual Leap in Performance and Efficiency

SK Hynix disclosed in its statement that the 12-layer HBM4E achieves significant improvements in both performance and power efficiency.

Specifically, the product achieves a maximum data processing speed of 16Gbps per pin, with power efficiency improved by over 20% compared to the previous generation. Additionally, HBM4E effectively reduces data transmission latency through its latest interface design and optimization, while maintaining stable operation in high-bandwidth environments. These features directly enhance data processing capabilities in AI training and inference scenarios, helping customers improve operational efficiency in AI data centers and large-scale computing systems.

Advanced Packaging Technology Enables 48GB Capacity

In terms of packaging process, SK Hynix employs Advanced MR-MUF (Mass Reflow-Molded Underfill) technology to achieve a single-chip capacity of 48GB within a 12-layer stacked structure while ensuring structural stability.

The MR-MUF process protects circuits by injecting liquid protective material between chips. SK Hynix has further optimized this process for HBM4E, reducing its thermal resistance by 17% compared to the previous generation HBM4, thereby ensuring stable operation of the memory chips in high-performance computing environments. This technological breakthrough is particularly critical for AI data centers operating under continuous high loads.

In a statement, Ahn Hyun, President and Chief Development Officer of SK Hynix, said: "SK Hynix, with its market-leading technology capabilities and manufacturing expertise, is laying the groundwork to reinforce its AI leadership based on HBM4E. Through close collaboration with our partners, we will deliver the value the market needs, while further solidifying our technological leadership position as a full-stack AI memory creator."

SK Hynix emphasized that its accumulated experience in the mass production and supply of HBM3, HBM3E, and HBM4 served as an important foundation for the on-time delivery of these HBM4E samples. The company stated it will leverage its market-validated product reliability and supply capabilities to support the development of next-generation infrastructure and help address performance bottlenecks in AI systems.

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Preguntas relacionadas

QWhat new AI memory product samples did SK Hynix deliver, and what was the market reaction?

ASK Hynix delivered samples of its next-generation HBM4E memory chips to key customers. Following the announcement, the company's stock price surged 7.3% during the trading session, reaching a new all-time high.

QWhat are the key performance improvements of SK Hynix's 12-layer HBM4E memory?

AThe 12-layer HBM4E features a per-pin data processing speed of 16Gbps, a power efficiency improvement of over 20% compared to the previous generation, and a 17% reduction in thermal resistance.

QHow does the Advanced MR-MUF packaging technology benefit the HBM4E chip?

AThe Advanced MR-MUF (Mass Reflow-Molded Underfill) technology enables a single HBM4E chip to achieve a capacity of 48GB within a 12-layer stacked structure. It also ensures structural stability and lowers thermal resistance by 17%, which is crucial for stable operation in high-performance AI data centers.

QWhat does SK Hynix claim about its position in the AI memory market based on this development?

ASK Hynix claims that the timely delivery of HBM4E samples reinforces its core position in the AI infrastructure supply chain and signals its continued leadership in HBM technology. The company positions itself as a 'full-stack AI memory creator' solidifying its technical leadership.

QWhat prior experience does SK Hynix cite as crucial for the HBM4E sample delivery?

ASK Hynix cites its extensive prior experience in the mass production and supply of HBM3, HBM3E, and HBM4 products as the critical foundation that enabled the on-schedule delivery of the HBM4E samples.

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